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650V 50A Field Stop Trench IGBT - RGS00TS65D (New)

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

유통 재고가 없기 때문에 구입에 문의하십시오 --- 문의
포장 수량
최소 포장 단위
포장 사양
RGS00TS65DC11 공급중 TO-247N 450 30 Tube Yes
사양 :
VCES [V] 650
IC(100°C)[A] 50
VCE(sat) (Typ.) [V] 1.65
Built-in Diode FRD
Pd [W] 326
VGE(th) (Min.)[V] 5.0
BVCES (Min.)[V] 650
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
특징 :
    • Low Collector - Emitter Saturation Voltage
    • Short Circuit Withstand Time 8μs
    • Qualified to AEC-Q101
    • Built in Very Fast & Soft Recovery FRD
    • Pb - free Lead Plating ; RoHS Compliant
로옴은 언제든지 사양을 변경할 수 있습니다.
기술 정보
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation