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30V Nch+Nch 파워 MOSFET - HS8K11

HS8K11은 스위칭 용도에 적합한 파워 MOSFET입니다.

* 본 제품은 STANDARD GRADE 제품입니다. 이 제품은 차재 기기의 사용을 권장하지 않습니다.
형명
상태
패키지
포장 수량
최소 포장 단위
포장 사양
RoHS
HS8K11TB 공급중 HSML3030L10 3000 3000 Taping Yes
 
사양 :
Grade Standard
Package Code HSML3030L10
Package Size[mm] 3.0x3.0(t=0.6)
Number of terminal 10
Polarity Nch+Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 7.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0208
RDS(on)[Ω] VGS=10V (Typ.) 0.0128
RDS(on)[Ω] VGS=Drive (Typ.) 0.0208
Total gate charge Qg[nC] 5.7
Power Dissipation (PD)[W] 2.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
특징 :
  • · Low on-resistance.
    · Pb-free lead plating; RoHS compliant.
    · Halogen Free.
 
 
단자 배치도 :
Pin Configration
 
 
기술 정보
Reference Circuit

DC-DC Step-Down Converter 1P Vo=5V Io=5A

Reference Circuit

DC-DC Step-Down Converter 2P-Interleave Vo=5V Io=10A

Reference Circuit

DC-DC Step-Down Converter 3P-Interleave Vo=5V Io=15A

SPICE Simulation Evaluation Circuit Data

DC-DC Step-Down Converter 1P Vo=5V Io=5A

SPICE Simulation Evaluation Circuit Data

DC-DC Step-Down Converter 2P-Interleave Vo=5V Io=10A

SPICE Simulation Evaluation Circuit Data

DC-DC Step-Down Converter 3P-Interleave Vo=5V Io=15A

NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors