600V High Voltage 3 Phase Bridge Driver - BS2130F-G

The BS2130F is a monolithic bridge driver IC, which can drive N-channel power MOSFET and IGBT driver in 3 phase systems with bootstrap operations. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. To provide a protection circuit, the device Includes an Under Voltage Lockout (UVLO) circuit and an Over Current Protection (OCP) circuit. The UVLO circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.

* 본 제품은 STANDARD GRADE 제품입니다. 이 제품은 차재 기기의 사용을 권장하지 않습니다.
포장 수량
최소 포장 단위
포장 사양
BS2130F-GE2 공급중 SOP-28 1500 1500 Taping Yes
사양 :
Grade Standard
Channel 6
High-side floating supply voltage [V] 600
Min Output Current Io+ [mA] 200
Min Output Current Io- [mA] 350
Turn-on/off time (Typ.) [ns] 630/580
Dead time (Typ.) [ns] 300
Offset supply leakage current (Max.) [µA] 50
Vcc(Min.)[V] 11.5
Vcc(Max.)[V] 20.0
Operating Temperature (Min.)[°C] -40
Operating Temperature (Max.)[°C] 125
특징 :
    • Floating Channels for Bootstrap Operation to +600V
    • Gate drive supply range from 11.5V to 20V
    • Built-in Under Voltage Lockout for Both Channels
    • The device includes an Over Current Protection circuit
    • Built-in Enable Channel (EN) which enable I/O functionality
    • Built-in FAULT Channel (/FAULT) which indicates over current and under voltage
    • RCIN Channel can determine the OCP holding time by external resistance and capacitance
    • 3.3V and 5.0V input logic compatible
    • Output in phase with input
관련 상품
관련 신제품 / 갱신 제품파워 매니지먼트
형명 제품 이름 패키지 Datasheet 유통 재고
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New Products:
기술 정보
BS2130F-G Application Note

Application for driving N-channel MOSFET and IGBT

Application Note

Thermal Resistance