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SPI BUS EEPROM - BR25G512FVT-3

BR25G512-3FVT는 512Kbit SPI BUS 인터페이스 시리얼 EEPROM입니다.

* 본 제품은 STANDARD GRADE 제품입니다. 이 제품은 차재 기기의 사용을 권장하지 않습니다.
형명
상태
패키지
포장 수량
최소 포장 단위
포장 사양
RoHS
BR25G512FVT-3GE2 공급중 TSSOP-B8 3000 3000 Taping Yes
 
사양 :
Grade Standard
I/F SPI BUS
Density [bit] 512K
Bit Format [Word x Bit] 64K x 8
Package TSSOP-B8
Operating Temperature (Min.)[°C] -40
Operating Temperature (Max.)[°C] 85
Vcc(Min.)[V] 1.8
Vcc(Max.)[V] 5.5
Circuit Current (Max.)[mA] 4.0
Standby Current (Max.)[μA] 1.0
Write Cycle (Max.)[ms] 5.0
Input Frequency (Max.)[Hz] 10M
Endurance (Max.)[Cycle] 106
Data Retention (Max.)[Year] 100
특징 :
    • High Speed Clock Action up to 10MHz (Max)
    • Wait Function by HOLDB Terminal
    • Part or Whole of Memory Arrays Settable as Read only Memory Area by Program
    • 1.8V to 5.5V Single Power Source Operation Most Suitable for Battery Use
    • Up to 128 Bytes in Page Write Mode.
    • For SPI BUS interface (CPOL, CPHA) = (0, 0), (1, 1)
    • Self-timed Programming Cycle
    • Low Current Consumption
      ·At Write Action (5V) : 0.7mA (Typ)
      ·At Read Action (5V) : 2.4mA (Typ)
      ·At Standby Action (5V) : 0.1µA (Typ)
    • Address Auto Increment Function at Read Action
    • Prevention of Write Mistake
      ·Write Prohibition at Power On
      ·Write Prohibition by Command Code (WRDI)
      ·Write Prohibition by WPB Pin
      ·Write Prohibition Block Setting by Status Registers (BP1, BP0)
      ·Prevention of Write Mistake at Low Voltage
    • More than 100 years Data Retention
    • More than 1 Million Write Cycles
    • Bit Format 64K×8
    • Initial Delivery Data
      Memory Array: FFh
      Status Register: WPEN, BP1, BP0 : 0
 
 
기술 정보
Application Note

Thermal Resistance