SCT3030AL
Nch SiC 파워 MOSFET
SCT3030AL
Nch SiC 파워 MOSFET
SiC Trench 타입 MOSFET입니다. Planar 타입 SiC-MOSFET에 비해 동일 칩 사이즈로 ON 저항이 50% 삭감되어, 태양광 발전용 파워 컨디셔너 및 산업기기용 전원, 공업용 인버터 등, 모든 기기의 전력손실을 대폭 저감할 수 있습니다.
Product Detail
사양 :
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
30
Generation
3rd Gen (Trench)
Drain Current[A]
70
Total Power Dissipation[W]
262
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
특징 :
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant
Reference Design / Application Evaluation Kit
-
- Reference Design - REFPDT007
- 5kW High-Efficiency Fan-less Inverter
We employ trans-linked interleaved circuits as inverter circuits that utilize the high frequency switching performance of silicon carbide (SiC) MOSFET, achieving a power conversion efficiency of 99% or more at 5kW.Since this circuit topology allows a reduction in the inductance of the smoothing reactor, the high efficiency is achieved by reducing the number of windings of the reactor to dramatically reduce the copper loss. These novel inverter circuits have been developed jointly with Power Assist Technology Ltd. (https://www.power-assist-tech.co.jp/)
This reference design consists of three boards. Each is shown below.
- REFPDT007-EVK-001A Power Stage
- REFPDT007-EVK-001B Controller Board
- REFPDT007-EVK-001C Aux Power Supply
Since the interleaved type using SiC MOSFET (SCT3017AL, SCT3030AL) has an efficiency of 99.0% (total loss 51 W),heat generation is reduced, and the circuit can be cooled with downsized heat radiation fins without using a cooling fan.Furthermore, since the apparent switching frequency is doubled for the interleaved type, the smoothing filter is downsized by a factor of 2 in its size and weight.
